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SMALL-SIGNAL TRANSISTOR
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) DESCRIPTION
2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . 0.95 0.4 0.5 2.5 1.5 0.5
OUTLINE DRAWING
Unit
2.9 1.90
FEATURE
Small collector to emitter saturation voltage. VCE(sat)=-0.3V max@Ic=-100mA,IB=-10mA Excellent linearity of DC forward gain. 1.1
0.8
APPLICATION
For Hybrid IC,small type machine low frequency voltage Amplify application.
JEITASC-59 JEDECSimilar to TO-236
MAXIMUM RATINGSTa=25
Symbol VCBO VCEO VEBO I
O
TERMINAL CONNECTER
Ratings -50 -50 -6 -200 200 150 -55150 Unit V V V mA mW
Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature
BASE EMITTER COLLECTOR
Pc Tj Tstg
ELECTRICAL CHARACTERISTICSTa=25
Parameter C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF I C=-100A ,R V V V V Test conditions
BE
00.1
0.16 Limits Min -50 150 90 Typ 200 4 Max -0.1 -0.1 800 -0.3 20 V MHz pF dB
Super mini package for easy mounting
0.95
Unit V A A
=
CB=-50V, I E=0mA EB
=-6V, I C=0mA =-6V, I C=-1mA
CE
CE=-6V, I C=-0.1mA
I C=-100mA ,IB=-10mA V V V
CE=-6V, I E=10mA CB CE
=-6V, I E=0,f=1MHz
=-6V, I E=0.3mA,f=100Hz,RG=10k
It shows hFE classification in below table. Item Item
150300
250500
400800
ISAHAYA ELECTRONICS CORPORATION
SMALL-SIGNAL TRANSISTOR
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
COMMON EMITTER OUTPUT -50 0.18mA 0.16mA COLLECTOR CURRENT IC(mA) -40
-50
COMMON EMITTER TRANSFER
Ta=25 0.14mA 0.12mA
COLLECTOR CURRENT IC(mA) -40
Ta=25 VCE=-6V
-30
0.10mA 0.08mA
-30
-20
0.06mA 0.04mA
-20
-10
0.02mA IB=0
-10
-0 -0 -1 -2 -3 -4 -5 COLLECTOR EMITTER VOLTAGE VCE(V)
-0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE TO EMITTER VOLTAGE VBE(V)
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 Ta=25 VCE=-6V 100(@IC=-1mA) 1000
250 Ta=25 VCE=-6V GAIN BAND WIDTH PRODUCT fT(MHz) 200
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE
150
100
100
10
50
1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25 IE=0 f=1MHz
250 COLLECTOR DISSIPATION Pc (mW)
0
-1000
0.1
1 10 EMITTER CURRENT IE(mA)
100
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
200
10
150
100
1
50
0 0 25
0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100
50 75 100 AMBIENT TEMPERTURE Ta ( )
125
150
ISAHAYA ELECTRONICS CORPORATION
SMALL-SIGNAL TRANSISTOR
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003

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